Gate-tunable metafilm absorber based on indium silicon oxide

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Gate-Tunable Conducting Oxide Metasurfaces.

Metasurfaces composed of planar arrays of subwavelength artificial structures show promise for extraordinary light manipulation. They have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces, and orbital angular momentum manipulation and detection over a broad range of the electromagnetic spectrum. However, the optical properties of metasurfaces dev...

متن کامل

A Thermally Tunable Microlens Array on Indium Tin Oxide Glass

We present a polydimethylsiloxane (PDMS) microlens array on a glass substrate. By adjusting the temperature with indium tin oxide (ITO) microheaters, the properties of the individual microlenses are actively tuned without mechanical movement. We characterize the temperature-dependent changes of the microlenses by focal length and magnification measurements. Experimental results demonstrate that...

متن کامل

Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells

The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm/V s, reduces these losses compared to traditional, low-mobility transparent ...

متن کامل

Gate oxide metrology and silicon piezooptics

We describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process metrology in manufacturing of CMOS transistors for the 130 nm node and beyond. Specifically, we describe the difficulties associated with the introduction of silicon-on-insulator (SOI) substrates, alternative gate dielectrics (silicon oxynitride or metal oxides), and strained Si channe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nanophotonics

سال: 2019

ISSN: 2192-8614

DOI: 10.1515/nanoph-2019-0190